SOI器件X射线与^(60)Co γ射线总剂量效应比较  

Correlation between X-Ray and ^(60)Co γ-Ray Total Dose Effect in SOI Devices

作　　者：何玉娟[1] 罗宏伟[1] 恩云飞[1] 张正选[2] 

机构地区：[1]电子元器件可靠性物理及其应用技术国防科技重点实验室,广州510610 [2]中科院上海微系统与信息技术研究所,上海200050

出　　处：《电子器件》2010年第4期416-419,共4页Chinese Journal of Electron Devices

基　　金：重点实验室基金项目资助(9140C030604070C0304);国家十一五预研项目资助(51323060401)

摘　　要：为进行10keVX射线和60Coγ射线总剂量辐射效应的比较,采用这两种辐射源对SOI(Silicon-on-Insulator)n-MOSFET在不同偏置条件下进行总剂量辐照试验,分析了SOINMOS器件在两种辐射源下辐照前后的阈值电压的漂移值并进行比较。实验结果表明,SOINMOS器件的前栅特性中X射线与60Coγ射线辐照感生阈值电压漂移值的比值α随总剂量增加而增大,而背栅特性中α值在不同偏置条件下变化趋势是不同的;在总剂量为1×106rad(Si)时,前栅器件α值为0.6～0.75,背栅器件α值为0.76～1.0。The total dose radiation tests under the source of 10 keV X-ray and 60Co γ-ray in SOI n-MOSFET at different bias are performed,and the shifts of threshold voltage before and after irradiation in SOI n-MOSFET are analyzed and compared between the two radiation sources.It has been demonstrated factor α of SOI front gate device that is the ratio of radiation induced threshold voltage shifts with X-ray irradiation source to the shifts with 60Co γ-ray becomes large when the total dose increase,but the factor α in SOI back gate device has the different change trend with different bias,and the factor α is 0.6～0.75 in front gate device and 0.76～1.0 in back gate device when the total dose is 1×10^6 rad（Si）.

关 键 词：可靠性 辐射 总剂量效应 X射线 Γ射线 

分 类 号：TN306[电子电信—物理电子学]