一种适用于功率放大器的InGaP/GaAs HBT预失真电路  

A Pre-Distortion Circuit Based on InGaP/GaAs HBT for Power Amplifiers

作　　者：胡善文[1] 钱罕杰[2] 孙晓红[1] 张晓东[3,4] 高怀[1] 

机构地区：[1]东南大学国家ASIC系统工程技术研究中心,南京210096 [2]东南大学苏州研究院高频高功率器件与集成技术研究中心,江苏苏州215123 [3]苏州工业园区教育投资发展有限公司 [4]苏州英诺迅科技有限公司射频功率器件及电路技术中心,江苏苏州215123

出　　处：《电子器件》2010年第5期568-571,共4页Chinese Journal of Electron Devices

摘　　要：提出了一种具有串、并联负反馈网络的有源预失真电路,对其工作原理进行了分析。基于AWR Microwave Office软件的仿真结果表明:该预失真电路能够产生增益扩展与负相位偏差,可将其用于补偿功率放大器后级电路产生的增益压缩和正相位偏差,提高功放的线性度。将该预失真电路作为输入级设计了一款功率放大器,并基于截止频率为29.5 GHz的2μmInGaP/GaAs HBT工艺成功流片,测试结果表明:在3.5 V偏置电压下、1.5～1.8 GHz频段范围内,功放的功率增益可达27dB,P1dB为28 dBm,最大功率附加效率为36%。An active pre-distortion circuit with two feedback networks is designed.The simulation results based on AWR Microwave Office show that this pre-distortion circuit can achieve a gain expansion and a negative phase deviation which can compensate the gain compression and positive phase deviation of the following stages.A power amplifier with this pre-distortion circuit is designed and fabricated based on 2 μm InGaP/GaAs HBT technology whose cut-off frequency is 29.5 GHz.The measurement results show that over the frequency range from 1.5 to 1.8 GHz,its power gain can reach up to 27 dB with 28 dBm at 1 dB gain compression point,and the maximum power added efficiency comes up to around 36% with supply voltage of 3.5 V.

关 键 词：负反馈网络 预失真 功率放大器 

分 类 号：TN722.75[电子电信—电路与系统]