沉积条件对CVD法SiC涂层形貌和组成成分的影响  

Effects of deposition conditions on the morphology and composition of CVD SiC coating

作　　者：周乐平[1] 张明瑜[1] 黄启忠[1] 

机构地区：[1]中南大学粉末冶金国家重点实验室,湖南长沙410083

出　　处：《炭素技术》2010年第5期1-4,共4页Carbon Techniques

基　　金：国家自然科学基金项目(50802115;50721003);国家973计划项目(2006CB600901)

摘　　要：采用MTS-H2-Ar体系通过等温化学气相沉积(CVD)在石墨基底表面沉积了SiC涂层。研究了沉积温度、气体总压和气体流量对涂层形貌和组成成分的影响。SEM和AFM观察表明,SiC一次颗粒尺寸在100nm以内。在本实验的沉积条件变化范围内,Ar流量增大使涂层表面变粗糙,温度升高使涂层变厚。X射线衍射和拉曼光谱分析显示沉积物主要为3C型的β-SiC。气体总压和H2流量都增大时易生成游离Si。气体总压较小而H2流量较大时易生成游离C。当气体总压为5kPa,H2流量为500mL·min-1时可得到化学计量比的SiC。SiC coating was produced by isothermal chemical vapor deposition（CVD） on graphite substrate with trichloromethyl silicane （MTS） -H2- Ar system. Effects of deposition temperature and total gas pressure as well as gas flow rate on morphology and composition of the as - prepared coating were investigated. SEM and AFM observations show that the SiC particle size is less than 100 nm. Within the range of deposition condition in this experiment, coating morphology get eoarser at higher Ar flow rate and thicker at elevated temperature. XRD and Raman scattering spectroscopy analysis demonstrate that the deposition coating mainly consists of 3C type β- SiC. Free silicon appears when total gas pressure and H2 flow rate are both increased. Free carbon appears when total gas pressure is low and H2 flow rate is high. The stoichiometric SiC can be obtained at 5 kPa when H2 flow rate is 500 mL ·min^-1.

关 键 词：CVD SIC涂层 组成成分 沉积条件 

分 类 号：TB332[一般工业技术—材料科学与工程]