Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector  

作　　者：WEMBE TAFO Evariste SU Hong QIAN Yi KONG Jie WANG Tongxi 

机构地区：[1]Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China [2]Department of Physics, University of Douala, Cameroon

出　　处：《Nuclear Science and Techniques》2010年第5期312-315,共4页核技术（英文）

基　　金：Support by the Third World Academy of Sciences (TWAS);the National Natural Science Foundation of China (No.10735060)

摘　　要：The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-based application,specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics,particle physics and astrophysics research,etc.It's why we used only CMOS transistor to develop the entire system.A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC4 filter,we perform shaping time in the range,465 ns to 2.76μs with a low output resistance and the linearity almost good.The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si（Li）,CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-based application,specific integrated circuit for Front End Electronics（FEE） of read-out system of nuclear physics,particle physics and astrophysics research,etc.It＇s why we used only CMOS transistor to develop the entire system.A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC4 filter,we perform shaping time in the range,465 ns to 2.76μs with a low output resistance and the linearity almost good.

关 键 词：MOS场效应管 探测器 放大器 设计 高斯 CMOS晶体管 颗粒 成型 

分 类 号：TL821[核科学技术—核技术及应用]