环境友好半导体Mg2Si薄膜的研究进展  

Study on semiconductor Mg_2Si thin films

作　　者：赵珂杰[1] 谢泉[1] 肖清泉[1] 余志强[1] 

机构地区：[1]贵州大学理学院,新型光电子材料与技术研究所,贵州贵阳550025

出　　处：《中国光学与应用光学》2010年第5期446-451,共6页Chinese Optics and Applied Optics Abstracts

基　　金：国家自然科学基金资助项目(No.6076602);科技部国际合作专项资助项目(No.2008DFA52210);贵州省信息产业厅资助项目(No.0831)

摘　　要：介绍了近年来Mg2Si薄膜的研究进展。从Mg2Si材料的晶体结构出发,重点对Mg2Si薄膜的基本性质、制备方法和应用前景进行了论述。研究表明,Mg2Si是一种窄带隙间接半导体材料,在光电和热电领域都具有较好的应用价值,因其兼具了组成元素地层含量丰富、无毒、无污染等优点,被视为是一种新型的环境友好半导体材料。在Mg2Si薄膜的外延生长技术方面,目前比较成熟的方法有分子束外延、脉冲激光沉积、反应扩散等多种,但普遍存在制备条件较苛刻,成膜质量不高等缺点。最后,对目前存在的问题及未来的研究动向做了简要讨论。Recent developments of Mg2Si films are reviewed.On the basis of the crystal structure of Mg2Si,the basic properties,preparation methods,and application prospects of the films are presented.The researches show that Mg2Si is a kind of semiconductor with narrow-band-gap,which has good applications in photovoltaic and thermoelectric devices.Furthermore,the film is a new kind of environmental-friendly semiconductor material,and because the compositions of elements are rich in strata and non-toxic pollution,the materials attract great attention.In the technique of epitaxial growth,the relatively mature methods include molecular beam epitaxy,pulsed laser deposition,reaction-diffusion and so on.However,these methods have the problems of harsh preparation and poor quality of the thin film.Finally,current problems and future research trends of the materials are briefly discussed.

关 键 词：MG2SI 半导体薄膜 材料制备 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055