VB-GaAs单晶中掺Si浓度的控制  

Control of Si Doped Concentration in VB-GaAs Crystal

作　　者：林健[1] 兰天平[1] 牛沈军[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2010年第11期10-13,共4页Equipment for Electronic Products Manufacturing

摘　　要：低阻GaAs单晶的获得,一般是通过掺入掺杂剂Si来实现的。本文分析了VB-GaAs单晶的掺Si机理及作用,并在理论掺杂公式的基础上,通过实验和理论分析,确定了掺杂剂量的经验关系式。按此公式,在VB-GaAs单晶中得到了理想的掺Si浓度。Low resistance of GaAs crystal,usually through Si doped.The Si doped mechanism and function of low resistance of VB-GaAs are analyzed in this paper.On the basis of doping theory formula,by the analysis of experimental results,empirical formulae of Si doped doses is determined.According to the formula,the ideal Si doped concentration in GaAs crystal is obtained.

关 键 词：VB-GaAs单晶 掺杂剂 浓度 

分 类 号：TN305.3[电子电信—物理电子学]