不对称势垒对共振隧穿二极管I-V特性的影响  

Effect of Asymmetric Barriers on I-V Characteristics of Resonant Tunnel Diodes

作　　者：武一宾[1,2] 杨瑞霞[1] 商耀辉[2] 牛晨亮[2] 王健[2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2010年第11期663-667,共5页Micronanoelectronic Technology

基　　金：国家部委基金项目

摘　　要：利用Airy函数和传输矩阵方法计算了不对称势垒厚度的InP基AlAs/InGaAs/AlAs DBS结构在偏压情况下的共振透射系数,并通过材料生长和器件工艺制作得到了共振隧穿二极管的直流I-V特性。在峰值电流密度为132kA/cm2下,获得了17.84的电流峰谷比。测试结果还表明不对称势垒厚度的RTD在偏压情况下,当电子从较薄势垒向较厚势垒穿透时,更容易获得高的电流峰谷比,反之可获得较大的负微分电阻电压区域。The transmission coefficients of InP-base AlAs/InGaAs/A1As double barrier structures （DBS） with asymmetric thickness barriers were calculated with the bias voltage by Airy function formulism and transmission matrix methods, and the DC I-V characteristics of the reso- nant tunnel diode （RTD） were gotten by MBE and device processes. The peak-to-valley current ratio （PVCR） is 17.84 when the peak current density reaches 132 kA/cm^2. The measurement results also show that higher PVCR for the RTD with asymmetric thickness barriers is gotten easily as the electrons tunneling through the active area from the thin barrier to the thick barrier with the bias voltage, otherwise a big voltage range of the negative differential resistance （NDR） is gotten easily.

关 键 词：不对称势垒 共振隧穿二极管(RTD) 电流峰谷比(PVCR) 负微分电阻(NDR) 分子束外延(MBE) 磷化铟 

分 类 号：TN312.2[电子电信—物理电子学] TN304.23