SiGe纳米环的制备与电磁特性研究进展  

Fabrication and Magneticelectrical Properties of SiGe Nanorings

作　　者：丁澜[1,2] 马锡英[2] 黄仕华[1] 

机构地区：[1]浙江师范大学数理信息学院,浙江金华321004 [2]苏州科技学院数理学院,江苏苏州215011

出　　处：《微纳电子技术》2010年第11期668-673,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金项目(60976071;60776004);绍兴市科技计划项目(2009A21054)

摘　　要：SiGe纳米环、纳米螺绕环具有优异的电学、力学等性质,已成为非常重要的三维半导体纳米材料,在传感器、纳米电子学及纳机电系统中具有广阔的应用前景。简单介绍了制备SiGe纳米环、纳米螺绕环的方法,包括化学气相沉积法、分子束外延法和脉冲激光法,并介绍了SiGe纳米环形成的主要原因和相关的应用。SiGe纳米环是在Si和Ge间的横向应力作用下形成的,这种纳米环的电导对纳米环的曲率和外加磁场非常敏感。在外加磁场恒定的情况下,电导随曲率的增大而逐渐减小;当达到某一临界点后,又随曲率的增大而逐渐增大。可以应用外加电压控制SiGe纳米环的弯曲程度,成为纳米尖、黏性探头、挂钩和原子力显微镜悬臂梁等应用于纳米传感器、纳米探头及纳米机电系统中。SiGe nanorings and nanocoils have excellent electrical and mechanical properties, become very important three-dimensional （3D） semiconductor nanometer materials, and have great potential applications in sensor, nanoelectronics and nano-electro-mechanic systems. The fabrication approaches of SiGe nanorings and nanocoils are briefly introduced, including the chemical vapor deposition （CVD）, molecular beam epitaxy （MBE） and pulsed laser deposition （PLD）. The formation mechanism and related applications of SiGe nanorings are presented. SiGe nanorings are formed due to the action of the lateral strain between Si and Ge materials, and the conductivity of SiGe nanorings is very sensitive to its curvature and the external magnetic field. At a given magnetic field, the conductivity decreases initially with the curvature increasing, then increases gradually when the curvature is over a critical value. The curvature of SiGe nanorings is controlled by the applied voltage to become nanotips, sticky probes, hooks and AFM cantilevers which will be applied in the nano-sensor, nano-probe and nano-electro-mechanic system.

关 键 词：SiGe纳米环 纳米机电系统 异质薄膜卷膜 纳米螺旋器件 纳米传感器 

分 类 号：TB383[一般工业技术—材料科学与工程]