静电式RF MEMS开关的可靠性  

Reliability of Electrostatic RF MEMS Switches

作　　者：张永华[1] 曹如平[1] 赖宗声[1] 

机构地区：[1]华东师范大学微电子电路与系统研究所,上海200241

出　　处：《微纳电子技术》2010年第11期701-707,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(60676047)

摘　　要：MEMS开关是最常见的RF MEMS控制元件,是RF结构中一个关键的MEMS器件。长期可靠性是目前制约MEMS开关商业化进程中的一个主要问题。主要综述了静电式RF MEMS开关可靠性的新进展。欧姆式开关通常由于黏附或接触电阻的增大而失效,电容式开关的主要失效机理则与电介质层的充电有关。接触材料的选择是决定欧姆开关可靠性最重要的一个因素,"主动断开/被动接触"MEMS开关适用于软金属材料欧姆接触的可靠性要求。改善电容式开关可靠性的途径是改善介电层、优化驱动电压波形等以减小介质层的充电。MEMS switches are the most common RF MEMS control components and the key MEMS devices for RF architectures. The long-term reliability is an important problem to restrict the commercialization of MEMS switches. The new developments are reviewed for the reliability of electrostatically actuated RF MEMS switches. The ohmic switches usually fail by sticking or increasing of the contact resistance, whereas the main failure mechanism of capacitive switches relates to the dielectric charging. The selection of the contact material is the most critical factor in determining the reliability of ohmic switches. The active opening force/passive contact force MEMS switch is suitable to the reliability requirement of soft-metal ohmic contact materials. The approaches to reduce dielectric charging for the reliability improvement of capacitive switches are improving the dielectric layer and optimizing the driving voltage waveform, and so on.

关 键 词：射频微电子机械系统(RF MEMS) 开关 可靠性 欧姆接触 介质充电 

分 类 号：TN703[电子电信—电路与系统] TN631