ZnGeP_2晶体近红外吸收特性的研究  

Study on the Near-infrared Absorption Properties of ZnGeP_2 Single Crystals

作　　者：夏士兴[1] 杨春晖[1] 朱崇强[1] 马天慧[1] 王猛[1] 雷作涛[1] 徐斌[1] 

机构地区：[1]哈尔滨工业大学化工学院,哈尔滨150001

出　　处：《无机材料学报》2010年第10期1029-1033,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(E50872023);黑龙江省科技攻关项目(GC05A205)~~

摘　　要：采用布里奇曼法生长了磷化锗锌晶体,晶体毛坯尺寸达φ20mm×90mm,选取晶体尾部、晶体中部、籽晶端三个部位厚度为4.0mm的抛光晶片作为测试样品.从实验和理论上研究与分析了晶体的近红外吸收特性.实验结果显示:晶体透过率由尾部至近籽晶端逐渐增大,表明晶体近红外吸收由尾部至近籽晶端逐渐减小,这是由于晶体内缺陷密度发生了改变,且晶体内本征点缺陷分布比例不均衡,进而导致晶体的近红外吸收产生差异.理论上计算了磷化锗锌晶体施主缺陷GeZn+和受主缺陷V-Zn的吸收光谱.计算结果表明:受主缺陷V-Zn对磷化锗锌晶体吸收光谱产生的影响大于施主缺陷GeZn+.Zinc germanium phosphide crystals about φ20mm×90mm were grown by using Bridgman techniques.The three measured crystal sheets with thickness 4.0mm were obtained from the tail,middle and top of single crystal ingot.The infrared absorption properties were studied according to the experimental and theoretical data.The results show that the transmitted intensity gradually increased from top to bottom of ZGP crystals,which is caused by the inhomogeneous distribution of different kinds of intrinsic point defect.The absorption spectra of donor defects GeZn＋ and acceptor defect V-Zn in ZGP crystals are calculated theoretically.It is found that the influence of acceptor defect V-Zn on absorption spectra is stronger than that of donor defect GeZn＋.

关 键 词：磷化锗锌 近红外吸收 缺陷密度 施主缺陷 受主缺陷 

分 类 号：O782[理学—晶体学]