不同沉积速率微晶硅薄膜生长模式的蒙特卡洛模拟研究  

Simulation of Microcrystalline Si Film Growth at Varying Deposition Rates

作　　者：王志永[1] 朱志立[1] 谷锦华[1] 丁艳丽[1] 卢景霄[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052

出　　处：《真空科学与技术学报》2010年第6期632-635,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研究发展计划(批准号:2006CB202601);河南省自然科学基金(批准号:82300443203)

摘　　要：采用标度理论比较了不同速率下微晶硅薄膜的生长模式。结果是:低速时薄膜的生长指数为0.19,高速时薄膜的生长指数为0.61,两者生长机理明显不同。通过蒙特卡洛模拟薄膜生长过程,结果表明:生长基元的粘附系数和扩散能力对不同生长速率下薄膜的生长有较大的影响。The hydrogenated microcrystalline silicon（μc-Si∶H）films were deposited by very high frequency plasma enhanced chemical vapor deposition.The impacts of the film deposition conditions on microstructures of the films were evaluated.The microstructures and properties of the films were characterized with scanning electron microscopy,atomic force microscopy and Raman spectroscopy.The experimental results show that the deposition rate considerably affects the film growth modes.At a high and a low deposition rates,the growth exponents were found to be 0.61 and 0.19,respectively;besides,the growth modes differ significantly.The growth mode was then simulated by Monte Carlo method.The simulated results indicate that the sticking and diffusion coefficients depend on the deposition rate,strongly influencing the film growth modes.

关 键 词：蒙特卡洛模拟 微晶硅薄膜 椭偏谱仪 生长模式 

分 类 号：O484.1[理学—固体物理] O539[理学—物理]