In掺杂和退火对磁控溅射制备ZnO薄膜的结构和光电性质的影响  

Microstructures and Properties Characterization of In-Doped ZnO Films

作　　者：彭丽萍[1] 方亮[1,2] 杨小飞[1] 周科[1] 黄秋柳[1] 吴芳[1] 阮海波[1] 

机构地区：[1]重庆大学应用物理系,重庆400044 [2]重庆大学光电技术及系统教育部重点实验室,重庆400044

出　　处：《真空科学与技术学报》2010年第6期680-684,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(No.11074314;50942021);重庆大学研究生创新基金项目(No.CDJXS10102207);重庆大学"211工程"三期创新人才培养计划资助项目(S-09109)

摘　　要：用射频磁控溅射技术在石英玻璃衬底上制备出ZnO和In掺杂的ZnO(ZnO∶In)薄膜,研究了In的掺杂和退火对薄膜的结构和光电性质的影响。所制备的薄膜为纤锌矿结构的ZnO相,In的掺杂有利于ZnO薄膜的c轴择优生长,并且使其表面更加致密平整,退火提高了薄膜的结晶行为,但使得薄膜的表面有部分团聚形成。由于In3+替代了Zn2+,提供了一个多余的电子,ZnO薄膜的电阻率从28.9Ω.cm降低到4.3×10-3Ω.cm。由于载流子浓度的增加和晶格尺寸的拉长,In的掺杂使得ZnO薄膜的禁带宽度增加;空气中退火后薄膜的载流子浓度降低和晶格尺寸的减小,使得禁带宽度降低。ZnO薄膜在可见光范围的透光率在90%以上,受In的掺杂和退火的影响不大。室温下用325 nm的激发光源测试了样品的光致发光(PL)谱,发现In的掺杂对薄膜的PL谱影响不大,而退火后的ZnO薄膜在446 nm处的蓝光发射明显增强,更适合于作为蓝色发光器件。The In-doped ZnO films were deposited by RF magnetron sputtering on quartz glass substrates.The impacts of the deposition conditions,including In-doping levels,deposition rate and annealing temperature and time,on film growth were studied.The microstructures and properties of the In-doped ZnO were characterized with X-ray diffraction,scanning electron microscopy,photoluminescence spectroscopy and conventional probes.The results show that the In-doping and annealing significantly improved its microstructures and properties.For instance,In-doping promoted the c-axis preferred growth,reduced its resistivity from 28.9 Ω·cm to 4.3×10^-3 Ω·cm,and widened its gap width.The annealing in air resulted in crystallization and a slight gap narrowing,possibly because of the reductions of the carrier density and lattice constants.Interesting finding was that the annealing resulted in a sharp increase of blue light intensity at 446 nm.

关 键 词：透明导电薄膜 磁控溅射 In掺杂ZnO薄膜 光电性能 

分 类 号：O484.4[理学—固体物理]