氟化非晶碳膜结构的Raman和FTIR研究  

Microstructure Study of Fluorinated Amorphous Carbon Films by Raman and Fourier Transform Infrared Spectroscopy

作　　者：肖剑荣[1,2,3] 蒋爱华[2] 

机构地区：[1]中南大学冶金科学与工程学院,长沙410083 [2]桂林理工大学理学院,桂林541004 [3]广西信息材料重点实验室桂林电子科技大学,桂林541004

出　　处：《真空科学与技术学报》2010年第6期685-689,共5页Chinese Journal of Vacuum Science and Technology

基　　金：中南大学博士后科学基金资助项目(70121);广西信息材料重点实验室研究基金资助(桂科能0710908-06-K);广西教育厅科研基金项目资助(200807MS044);广西自然科学基金资助项目(2010GXNSFA013122)

摘　　要：利用反应射频磁控溅射法,以单晶Si片为衬底,在不同功率下制备了氟化非晶碳膜样品,并进行了不同温度的退火处理。采用拉曼光谱、傅里叶变换红外光谱和原子力显微镜对样品的结构进行了表征。通过谱线Lorentzian分峰拟合方法,分析比较了不同功率下制备的氟化非晶碳膜sp杂化结构,得到了薄膜生长过程功率控制与结构的关系,功率增大、退火温度升高,膜内sp2相对含量增加。退火温度达到350℃时,薄膜中石墨结构明显增加。The fluorinated amorphous carbon（a-C∶F） films were grown by DC magnetron sputtering on Si substrates.The impacts of film growth conditions,including the sputtering power,pressure,and annealing temperature,on its quality were evaluated.The microstructures and sp2 hybridization of the films were characterized with Raman spectroscopy,Fourier transform infrared spectroscopy,and atomic force microscopy.The spectra were analyzed with Lorentzian data-fitting.The results show that the annealing temperature and sputtering power strongly affect the microstructures of the films.For instance,the density of sp2 hybridization increases with the increases of both the annealing temperature and sputtering power.At 350 ℃,graphite phase considerably increased.

关 键 词：氟化非晶碳膜 拉曼光谱 溅射功率 退火 

分 类 号：TN304[电子电信—物理电子学]