TFT栅线及阵列的缺陷分析  

The Defects Analysis of the Gate Line and the Array of TFT

作　　者：柳江虹 马凯[1] 

机构地区：[1]中国科学院长春物理研究所

出　　处：《液晶与显示》1999年第2期126-130,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：中国科学院"九五"重大项目;吉林省科委"九五"科技攻关项目

摘　　要：对ＴＦＴ（ＴｈｉｎＦｉｌｍＴｒａｎｓｉｓｔｏｒ）的栅线及阵列缺陷的表现及成因进行了分析。在实际工艺过程中避免这些缺陷有利于提高器件成品率。The defects of the gate line and the array of TFT were studied in this paper It′s beneficial to improve the quality of display and raise the end product rate if these defects were avoided in the technology process

关 键 词：TFT器件 阵列缺陷 刻蚀 液晶显示器 

分 类 号：TN873.93[电子电信—信息与通信工程] TN141.9