面向工程化应用的量子阱红外探测材料制备研究  

Fabrication of QWIP material for mass production

作　　者：杜鹏[1] 周立庆[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2010年第11期1215-1219,共5页Laser & Infrared

摘　　要：为了得到高性能的量子阱红外探测材料,本文通过建立系统的材料设计、材料生长及材料表征体系,对面向工程化应用要求的单色以及双色红外探测的量子阱材料制备技术进行了较深入探索,并得到了相应部分器件的测试结果,实践证明,通过工艺与控制过程优化,量子阱红外探测材料的制备可实现高的可控性和稳定性。In the past few years researchers have made impressive progress in Ⅲ-Ⅴ based low dimension infrared detector such as QWIP,QDIP and Sb based superlattice.QWIP technology has been proved an important candidate for the third generation IR systems for its high uniformity,yield,large fomat and muti-band capability in Europe and American,but is still in the Lab in China.So these kinds of production are important issues to be developed.The design and fabrication of high performance QWIP material is the first thing to be solved.How to keep a high quality,high yield,and high efficiency material growth is the basement of the whole project.Since 2007 we start our research in QWIP material.And much progress has been achieved with the foundation of the material design,growth and characterization.In this paper we present some recent results of our research in single color and two color QWIP material.As a result,highly controllable and stable material can be guaranteed by the optimization of process control.

关 键 词：量子阱红外探测器 分子束外延 材料 表征 

分 类 号：TN362[电子电信—物理电子学]