射频磁控溅射制备SiO_2薄膜及性能表征  

Preparation and characterization of SiO_2 thin films by RF magnetron sputtering

作　　者：宋学萍[1] 黄飞[2] 吕建国[1,3] 孙兆奇[1] 

机构地区：[1]安徽大学物理与材料科学学院,安徽合肥230039 [2]安徽大学实验室与设备管理处,安徽合肥230039 [3]合肥师范学院物理与电子工程系,安徽合肥230061

出　　处：《安徽大学学报（自然科学版）》2010年第6期37-42,共6页Journal of Anhui University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(50872001);教育部博士点专项基金资助项目(20060357003);安徽省人才专项基金资助项目(2004Z029);安徽大学人才队伍建设基金资助项目;光电信息获取与控制教育部重点实验室基金资助项目;安徽高校省级自然科学研究基金重点资助项目(KJ2010A284);安徽省教育厅自然科学研究基金资助项目(KJ2009A006Z)

摘　　要：采用射频磁控溅射技术,制备4种不同溅射时间的SiO2薄膜.用XRD、PL、FTIR、UV-Vis等对薄膜的微结构、发光、红外吸收以及透、反射进行表征.结果表明:SiO2薄膜仍呈四方晶体结构,平均晶粒尺寸在17.39～19.92nm之间;在430nm附近出现了发光峰,在1049～1022cm-1之间出现了明显的红外吸收峰,且随着溅射时间的增加发生红移;在可见光范围内平均透射率大于85%.SiO2 thin films with different thickness were prepared by RF magnetron sputtering.Microstructure,photoluminescence spectra,infrared absorption spectra and UV-Vis spectra of the thin films were characterized by X-ray diffractometer,fluorescence spectrometer,Fourier transform infrared spectrometer,and UV-Vis spectrophotometer.The results showed that the thin films were still tetragonal crystal structure,and the mean grain size increased from 17.39 nm to 19.92 nm.Photoluminescence peak of all the thin films appeared at 430 nm.The infrared absorption peaks appeared at the range of 1 049-1 022 cm-1 of the thin films,and redshifted with increasing film thickness.Average transmittance of the thin films was above 85% in the visible range.

关 键 词：SIO2薄膜 射频溅射 微结构 PL谱 红外吸收 

分 类 号：O484[理学—固体物理]