Time delay in InGaN multiple quantum well laser diodes at room temperature  

作　　者：季莲 江德生 张书明 刘宗顺 曾畅 赵德刚 朱建军 王辉 段俐宏 杨辉 

机构地区：[1]State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences [2]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2010年第12期305-309,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 60976045,60506001,60836003 and 60776047);the National Basic Research Program of China (Grant No. 2007CB936700);the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017)

摘　　要：This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the speed of the delay time reduction becomes slower as the current amplitude increases further. Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire. It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action. The traps can be bleached by capturing injected carriers. The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes.This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the speed of the delay time reduction becomes slower as the current amplitude increases further. Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire. It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action. The traps can be bleached by capturing injected carriers. The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes.

关 键 词：INGAN laser diode delay effect saturable absorber TRAPS 

分 类 号：TN248.4[电子电信—物理电子学]