Design and manufacture of planar GaAs Gunn diode for millimeter wave application  

作　　者：黄杰 杨浩 田超 董军荣 张海英 郭天义 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences [2]School of Physical Science and Technology,Southwest University

出　　处：《Chinese Physics B》2010年第12期451-455,共5页中国物理B（英文版）

基　　金：Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 60806024);the Fundamental Research Funds for Central University of China (Grant No. XDJK2009C020)

摘　　要：GaAs-based planar Gunn diodes with A1GaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of structure diode, one has a fixed distance between the anode and cathode, but has variational cathode area, the other has a fixed cathode area, but has different distances between two electrodes. The fabrication of Gunn diode is performed in accordance with the order of operations： cathode defining, mesa etching, anode defining, isolation, passivation, via hole and electroplating. A peak current density of 29.5 kA/cm^2 is obtained. And the charavteristics of negative differential resistance and the asymmetry of the current-voltage curve due to the A1GaAs hot electron injector are discussed in detail. It is demonstrated that the smaller size of active area corresponds to the smaller current, and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current, and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.GaAs-based planar Gunn diodes with A1GaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of structure diode, one has a fixed distance between the anode and cathode, but has variational cathode area, the other has a fixed cathode area, but has different distances between two electrodes. The fabrication of Gunn diode is performed in accordance with the order of operations： cathode defining, mesa etching, anode defining, isolation, passivation, via hole and electroplating. A peak current density of 29.5 kA/cm^2 is obtained. And the charavteristics of negative differential resistance and the asymmetry of the current-voltage curve due to the A1GaAs hot electron injector are discussed in detail. It is demonstrated that the smaller size of active area corresponds to the smaller current, and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current, and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.

关 键 词：GAAS planar Gunn diode hot electron injector millimeter generation 

分 类 号：TN315.3[电子电信—物理电子学]