应变纤锌矿GaN/Al_xGa_(1-x)N量子点中杂质态结合能及其压力效应  

Binding Energies of Impurity States in a Strained Wurtzite GaN/Al_xGa_(1-x)N Quantum Dot Influenced by Hydrostatic Pressure

作　　者：王艳驹[1] 闫祖威[1,2] 

机构地区：[1]内蒙古大学物理科学与技术学院,呼和浩特010021 [2]内蒙古农业大学理学院,呼和浩特010018

出　　处：《内蒙古大学学报（自然科学版）》2010年第6期649-654,共6页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金资助项目(10964006);教育部科学技术研究重点资助项目(208025)

摘　　要：在有效质量近似下,利用变分法研究无限高势垒GaN/AlxGa1-xN应变长方量子点中类氢杂质态结合能及流体静压力效应.数值计算表明,杂质态结合能随量子点尺寸的增大而减少,但随流体静压力的增大而增加.此外,比较了考虑和不考虑应变时杂质态的结合能,结果发现在量子点长度较小的情况下,考虑应变后的结合能比不考虑应变后的高,而在量子点长度较大的情况下则相反.In the framework of effective mass, a variational method is adopted to discuss the binding energy of a hydrogenic impurity state in a strained wurtzite cuboid quantum dot by considering the hydrostatic pressure. The result indicates that the binding energy decreases with increasing the size of a quantum dot, but increases with increasing pressure. The binding energies with strain effect and that of without strain effect are compared. The results show the binding energies of impurity states with strain effect are higher than that without strain effect when the quantum dot length is small,but the status is opposite when the quantum dot length is large.

关 键 词：量子点 类氢杂质 应变 流体静压力 

分 类 号：O471.3[理学—半导体物理]