薄膜厚度对NiO/NiFe/Cu/NiFe自旋阀多层膜的磁阻效应的影响  

作　　者：吴丹丹[1] 李佐宜[1] 邱进军[1] 卢志红[2] 

机构地区：[1]华中理工大学电子科学与技术系,武汉430074 [2]中国科学院上海冶金所,上海200050

出　　处：《磁记录材料》1999年第1期4-8,共5页Magnetic Recording Materiais

基　　金：国家教委部门开放研究实验室资助!"上海交通大学薄膜与微细技术实验室"

摘　　要：用射频磁控溅射方法制备多层膜，研究了双层膜NiO／NiFe的矫顽力Hc和交换耦合场Hex与反铁磁层NiO、铁磁层NiFe厚度的关系。结果表明：NiO厚度为70nm时，Hex最大；Hc随NiO厚度增大而增大。当NiFe厚度增加时，Hex近似线性减小；而矫顽力则随NiFe厚度增大开始有缓慢增加，然后才减小。对于NiO（70nm）／NiFe（t1nm）／Cu（2．2nm）／NiFe（t2nm）自旋阀多层膜材料，研究了NiFe膜厚度对磁阻效应的影响。结果表明：被钉扎层NiFe的厚度为3nm时，自由层NiFe的厚度为5nm时，MR值分别最大，约为1．6％。We successfully fabricated spin - valve multi - layers by RF magnetronsputtering, and strdied the influence of thickness of anifermagntic latyer NiO andferromagnetic laye NiFe on Hc and Hex of Nio/NiFe doube layer. The result showed that thebiggest Hex was obtained when the thickness of NiO laye is 70nm and Hc was increasing asAnckness of NiO was increasing. When the thickness of NiFe wes increasing, Hex wasapproximately decreasing lineally, but Hc was sfowly increing at the beginning, thendecreasing.We also studied the influence of thickness of NiFe laye on MR effeCt of NiO(70nm)/NiFe(t1 nm)/Cu(2.2nm)/NiFe(tz nm)multilarers. The resrlt showed tha the maximumMR value 1.6% was edned separatel at the thickness of pinned layer NiFe 3 nm or freelaye NiFe 5nm.

关 键 词：磁阻效应 矫顽力 交换耦合场 自旋阀多层膜 磁头 

分 类 号：TQ587.5[化学工程—精细化工] TM27[一般工业技术—材料科学与工程]