热场结构对直拉硅单晶生长能耗影响分析  

Impact Analysis of Hot Zone Structure on Power Consumption During CZ Silicon Growth

作　　者：邓树军 高宇[1,2] 姜舰 戴小林 吴志强[1,2] 刘冰 

机构地区：[1]有研半导体材料股份有限公司,北京100088 [2]北京有色金属研究总院,北京100088

出　　处：《半导体技术》2010年第12期1183-1185,共3页Semiconductor Technology

基　　金：国家科技重大专项项目(2008zx02401)

摘　　要：结合多年热场使用经验和计算机模拟技术分析了在热场结构中影响能耗的主要因素,并提出了降低能耗的有效措施,其中包括使用热屏、紧凑的热场结构及使用低热导率的保温材料。使用小口径热屏对降低能耗有显著的效果。改进热场结构:减小加热器与石墨坩埚的间距或减小加热器与保温层的间距都能有效降低直拉硅单晶生长能耗。分析了温场中其他热量的损失,提出了包括减少热场部件与炉体直连,选用低热导率的保温材料的方法可以有效降低能耗。The main reasons that affect the power consumption were analyzed using the experiences in hot zone application and computer simulations technology.Principles were generalized which reduce power consumption in hot zone design by the heat shield,compact hot zone configuration and the insulation materials of low coefficient thermal conductivity.The use of the small-caliber heat shield has a significant effect on the reduce of the power consumption.The modification of the hot zone structures has more effect to reduce the power consumption of the crystal growth,lower space of the heater and the crucible,lower space of the heater and the insulation.The other way of the heat loss to reduce the power consumption was analyzed,including the reduce of the connection of the Graphite parts and the furnace,the use of the insulation materials of low coefficient thermal conductivity.

关 键 词：模拟 硅单晶 能耗 热场 直拉 

分 类 号：TN304.12[电子电信—物理电子学]