国产炉拉制Φ>76.2mm无位错FZ硅单晶的两种工艺热场分析  

Thermal Field Analysis on Two Kinds of Process for Manufacturing Free Dislocation FZ Monocrystalline Silicon ( Φ >76 2mm)by Home Made Equipment

作　　者：黄立新 

机构地区：[1]峨眉半导体材料厂

出　　处：《半导体技术》1999年第2期55-59,共5页Semiconductor Technology

摘　　要：对国产设备试制及生产Φ＞７６．２ｍｍ无位错ＦＺ硅单晶的两种最为稳定的工艺热场作了较全面的分析总结。The author has more comprehensively analyzed and summarized the two more stable thermal fields for trial and manufacture of free dislocation FZ monocrystalline silicon ( Φ >76 2mm) by home made equipment.

关 键 词：硅单晶 无位错 FZ硅单晶 工艺热场分析 

分 类 号：TN304.12[电子电信—物理电子学]