基于PVT变量的多米诺电路性能分析和优化  

Analysis and Optimization of PVT Aware Domono Circuits in Nanometer Scale

作　　者：孟宪超[1] 李宏[1] 杜雪[2] 

机构地区：[1]西北工业大学电子信息学院,西安710072 [2]西北工业大学自动化学院,西安710072

出　　处：《微处理机》2010年第5期28-31,34,共5页Microprocessors

摘　　要：随着集成电路尺寸的日益降低,工艺制程和非工艺制程变量对电路的影响越来越重要。针对组成高性能处理器的多米诺电路,对影响其功耗、延迟以及噪声的工艺、电压和温度因素,采用45nm BSIM4工艺模型进行了仿真分析,指出了为满足不同的设计指标必须考虑的设计因素,并分析给出了一个全局最优的性能指标。As the technology scales down,the influence of process variations and none-process variations should be considered in the meanwhile,analysis of the power,delay,and noise margin of domino circuits under the impact of variations is included in this paper.Simulations base 45nm BSIM4 models show that to meet constrained yield and overall performance under the impact of variations,different key parameters should be considered,also a new metric is proposed in this paper to achieve the overall performance,allowing the designers to make informed design decision.

关 键 词：PVT变量 多米诺 漏电流 低功耗 延迟 噪声容限 

分 类 号：TN4[电子电信—微电子学与固体电子学]