基于GaAs/Al_xGa_(1-x)As多量子阱光子晶体的窄带滤波器  

Photonic Crystal Optical Filter Based on GaAs/Al_xGa_(1-x)As Multiple Quantum Wells

作　　者：刘江涛[1] 谈振兴[1] 胡爱荣[1] 肖文波[2] 

机构地区：[1]南昌大学物理系,南昌330031 [2]南昌航空大学无损检测技术教育部重点实验室,南昌330063

出　　处：《光子学报》2010年第11期1947-1950,共4页Acta Photonica Sinica

基　　金：国家自然科学基金(10904059);航空科学基金(2010ZB56004);江西省自然科学基金(2009GQW0017);南昌航空大学博士启动基金(EA200908017)资助

摘　　要：讨论了利用GaAs/AlxGa1-xAs多量子阱构成的一维光子晶体实现窄带滤波的原理.研究了外加电场下GaAs/AlxGa1-xAs多量子阱的激子吸收所导致的反常色散行为.研究发现,在反常色散材料的共振频率附近,存在一个较强色散且吸收很小的区域,该区域内的色散可以在PCs的带隙中产生一个窄的通频带,其对应的最大透过率约为0.73,全固态滤光器的带宽约为4.9nm,并可利用外加电场进行调谐,这将为设计一种全新的固态滤波器提供指导.A new theory of narrow bandwidth photonic crystal optical filter,which consists of GaAs/AlxGa1-xAs multiple quantum wells,is proposed.The anomalous dispersion behavior caused by excitons absorption in GaAs/AlxGa1-xAs MQW under an external electric field is investigated.The results show that there is a strong dispersion and small absorption region in the near resonant frequency of the anomalous dispersion material.Thus,a narrow transmission band will appear in the photonic band gap due to the dispersion in that region,of which corresponding maximum transmission value is about 0.73 and the bandwidth of the all solid-state filter is about 4.9 nm.This filter can be tuned by an external electric field.It provides guidance for the design of the new solid-state filter.

关 键 词：多量子阱 光子晶体 窄带滤波器 

分 类 号：O439[机械工程—光学工程]