Zn离子注入增强TiO2纳米管光电效应  

Enhanced photoelectric effect of TiO_2 nanotube arrays modified by Zn implantation

作　　者：梁宏[1,2] 廖斌[1,2] 马芙蓉[1,2] 吴先映[1,2] 张旭[1,2] 刘安东[1,2] 

机构地区：[1]北京师范大学射线束技术与材料改性教育部重点实验室,北京师范大学核科学与技术学院,北京100875 [2]北京市辐射中心,北京100875

出　　处：《核技术》2010年第12期903-907,共5页Nuclear Techniques

摘　　要：用阳极氧化法在钛金属表面制备出致密有序的TiO_2纳米管阵列,用MEVVA源离子束技术在其上进行金属Zn离子的掺杂注入。用电镜观察离子束轰击对TiO_2纳米管阵列结构的影响。研究了掺杂前后TiO_2纳米管阵列在紫外光和可见光区域的光电效应。用全势线性缀加平面波(FP-LAPW)法讨论了TiO_2纳米管对可见光响应的机理。Dense and highly ordered TiO2 nanotube arrays （TINT） were fabricated by electrochemical anodic oxidation method, and doped with Zn by MEVVA ion implantation. The surface morphology was characterized by scanning electron microscope. Photoelectric efficiency of the doped TiNT samples under UV and visible light excitation was studied. Theoretical study of anatase TiO2 doped with Zn was carried out by the LAPW method based on density functional theory.

关 键 词：TIO2纳米管 zn离子注入 光电效应 

分 类 号：O59[理学—应用物理]