Si基3C-SiC薄膜的LPCVD反向外延研究  

Research on reverse-epitaxial growth of 3C-SiC film on Si by LPCVD

作　　者：廖熙[1] 杨治美[1] 杨翰飞[1] 龚敏[1] 孙小松[2] 

机构地区：[1]四川大学物理科学与技术学院微电子技术四川省重点实验室,成都610064 [2]四川大学材料科学与技术学院,成都610064

出　　处：《四川大学学报（自然科学版）》2010年第6期1331-1334,共4页Journal of Sichuan University(Natural Science Edition)

摘　　要：采用低压化学气相淀积(LPCVD)技术,以CH_4和H_2的混合气体作为反应源气体,在n型Si(111)衬底上反向外延生长出高迁移率的自掺杂的n型3C-SiC薄膜.在此反应过程中,H_2作为稀释与运载气体,CH_4提供C源,而Si源由Si衬底提供.通过X射线衍射分析仪(XRD)与场发射扫描电镜(FESEM)分别研究生长出的3C-SiC薄膜的晶格结构和表面形貌.其在室温下的霍尔迁移率的值为1.22×10~3cm^2/(V·s),高于其它相关文献报道的霍尔迁移率.实验结果表明,此生长方法可以生长出表面较为平整,并具备高迁移率的3C-SiC薄膜.High-mobility and auto-doping n-type 3C-SiC film was reverse- epitaxially grown on n-Si（111） substrate by Low pressure chemical vapor deposition （LPCVD）. CH4 was used as the carbon source, which was diluted and carried by H2, while silicon substrate was used as the silicon source. The crystal structure was characterized by X-ray diffraction （XRD）. The Field emission scanning electron microscope （FESEM） was used for observing the surface morphology of 3C-SiC film. The Hall mobility of 1. 22 ×10^3 cm2/（V·s）, which is higher than other Hall mobility ever reported, was obtained. The results revealed that the 3C-SiC film, which has flat surface and high mobility, can be obtained by using this method of growth.

关 键 词：立方碳化硅 反向外延 表面碳化 霍尔迁移率 

分 类 号：TN304.055[电子电信—物理电子学]