Zn取向对氧化法制备ZnO薄膜光致发光性能的影响研究  

Photoluminescence study of ZnO films prepared by the oxidation of the different orientation Zn films

作　　者：任树洋[1] 任忠鸣[1] 任维丽[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《功能材料》2010年第12期2128-2130,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50671060)

摘　　要：先利用电阻加热真空蒸发法制备(101)和(002)优先取向的金属Zn薄膜,而后氧化处理制备ZnO薄膜。并对制备的ZnO薄膜进行了XRD,SEM,紫外-可见光吸收谱和光致发光(PL)分析。XRD结果显示制备的ZnO薄膜中有未完全氧化的金属Zn。吸收谱结果发现未完全氧化的ZnO薄膜具有强烈的紫外吸收。PL谱结果显示该法制备的ZnO薄膜具有很高的PL强度,而且(101)前驱金属膜制备的ZnO比(002)前驱金属膜制备的试样具有更高的PL强度。未完全氧化的Zn所形成的缺陷是PL强度较高的原因,SEM结果显示的ZnO薄膜表面粗糙度较大引起强烈的紫外吸收也是激发光强度高的原因之一。Zinc oxide（ZnO）films were synthesized by thermal oxidation of（101）and（002）orientation zinc films which were prepared by resistance heating vacuum evaporation.The structural and optical properties of ZnO films were investigated using XRD,SEM,UV-Vis absorption spectra and photoluminescence（PL）analysis.The annealing samples show mixed patterns of Zn and ZnO peaks from XRD results.Photoluminescence（PL）spectra at room temperature of the ZnO films display predominant excitonic ultraviolet（UV）emission and weak deep level visible emission.It is observed that the ZnO films prepared by（101）orientation zinc films have more stronger UV emission intensity than the samples prepared by（002）orientation zinc films.The excellent UV emission from the annealing films is attributed to the certain effect of Zn doping and a strong UV absorption.

关 键 词：ZNO薄膜 光致发光性能 氧化 

分 类 号：O484.1[理学—固体物理] O484.4[理学—物理]