退火对Al-Sb多层薄膜的影响  

Effect of Annealing on Al-Sb Multilayer Films

作　　者：贺剑雄[1] 武莉莉[1] 郝霞[1] 郑家贵[1] 冯良桓[1] 张静全[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《无机材料学报》2010年第1期27-31,共5页Journal of Inorganic Materials

基　　金：国家高技术研究与发展计划(2006AA05Z418)

摘　　要：采用直流磁控溅射法制备Al和Sb交替层,在真空环境下进行高温退火后得到了AlSb多晶薄膜.通过X射线衍射(XRD)、霍尔效应、暗电导率温度关系以及透反射光谱研究了薄膜的结构、电学和光学性质.结果表明,退火后形成的AlSb多晶薄膜呈立方相,沿(111)择优取向,且导电类型是P型,载流子浓度为1019cm-3,吸收系数在可见光波段大于104cm-1.样品在580℃退火后,间接跃迁光能隙为1.64eV,且升温电导激活能为0.01eV和0.11eV.此方法制备的AlSb多晶薄膜应用于TCO/CdS/AlSb/ZnTe:Cu/Au结构的太阳能电池中,得到了107mV的开路电压.The metallic films of Al and Sb were deposited alternately on quartz glass substrates by magnetron sputtering method and then annealed at high-temperature in vacuum to obtain AlSb polycrystalline.The structural,electrical and optical properties of the films before and after annealing were studied with X-ray diffraction（XRD）,Hall effect,the temperature dependence of the dark conductivity and UV-Vis transmission and reflection spectra.XRD results show that Al-Sb multilayers transform to AlSb polycrystalline cubic phase films with preferred orientation in（111） direction.The measurement results indicate that the annealed AlSb films are P-type semiconductor with the carrier density of 1019cm-3 and the absorption coefficient is higher than 104cm-1 in the visible light.After annealed at 580℃,the indirect energy band-gap of the AlSb film is about 1.64eV.During the temperature increasing process,the conductivity activation energy Ea is 0.01 and 0.11eV.The open circuit voltage of 107mV is achieved in TCO/CdS/AlSb/ZnTe：Cu/Au devices,which demonstrates the potential of AlSb as the absorber layer in solar cells.

关 键 词：Al-Sb薄膜 磁控溅射法 退火 

分 类 号：TM914[电气工程—电力电子与电力传动]