SnO_2超微粒薄膜的界面电子转移研究  被引量:3

Study of Charge Transfer at the Interface of SnO_2 Ultra-fine Particle Film/Gas

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作  者:王雅静[1] 姜月顺[2] 戴国瑞 李铁津 

机构地区:[1]沈阳化工学院精细化工系,沈阳110021 [2]吉林大学化学系,长春130023

出  处:《Chinese Journal of Chemical Physics》1999年第2期201-204,共4页化学物理学报(英文)

摘  要:用PECVD方法制备了SnO2超微粒薄膜,此薄膜表面吸附很多氧,而且只对醇敏感,测量不同醇(甲醇、乙醇、正丙醇、乙二醇)的敏感性质和对薄膜进行红外光谱测量,发现薄膜表面化学吸附、、O-成为敏感活性中心是电子转移的桥梁。建立了电子转移的模型:表面主要夺取醇中的质子,O-主要与醇中β-C上的H(与α-COH反式共平面)作用。醇的最终产物是醛类。解释了SnO2超微粒薄膜作为传感器材料的气敏特性。SnO2 film have been deposited on silicon by PECVD (plasma enhance chemical vapordeposition) There are more chemical adsorbed oxygen ions on the surface of SnO2 film. Detection of SnO2 thin film resistance to all kinds of gas has been shown that is sensitive only to alcohol. IR and sensitivity of alcohol (CH3OH, CH3CH2OH, CH3CH2CH2OH, HOCH2CH2OH)have been taken. Model of alcohol oxidation at SnO2 surface is obtained. O2, O2 andO- at SnO2 surface are active centers and medium of the charge transfer. O2 mainly capturesproton from alcohol when O2 intethcts with alcohol. O- mathly contacts and reacts with H onβ-C (reverse side ofα-COH at same level) Lastly adsorption complex have been spitted toformyloxy. The model have explained character of sensitivity and is theoretical basis of gassensor designation.

关 键 词:薄膜  二氧化锡 超微粒 气敏材料 PECVD 

分 类 号:O614.432[理学—无机化学] O657.1[理学—化学]

 

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