光化法去除四氯化硅中三氯氢硅的实验研究  

Experimental study on removing of trichlorosilane in silicon tetrachloride with photochemistry reaction

作　　者：毛威[1] 苏小平[1] 王铁艳[1] 袁琴[1] 莫杰[1] 任剑[1] 

机构地区：[1]北京有色金属研究总院国晶辉红外光学科技有限公司,北京100088

出　　处：《无机盐工业》2010年第12期37-39,共3页Inorganic Chemicals Industry

摘　　要：以市售粗四氯化硅为原料,对光化法去除四氯化硅中常见的三氯氢硅杂质进行了研究。分析了以波长为330~380 nm的紫外线为光源,进行三氯氢硅的光化反应过程中,影响光化效果的主要因素及其相互之间的关系。研究表明：光化时间随着原料量的增加而增加;光化时间随着光照强度的减少而增加;氯气与三氯氢硅物质的量比至少大于22∶1;氯气与三氯氢硅物质的量比存在临界值,小于此值时光化时间随氯气与三氯氢硅物质的量比的增大而减少,大于此值时光化时间反而有所增加,光照强度越大此值越小。Removing of trichlorosilane,which is often found in silicon tetrachloride with photochemistry method was studied using raw silicon tetrachloride from market as material.Major factors influencing photoreaction effect and relationship of these factors were analyzed during the photoreaction process using ultraviolet light at 330~380 nm.Results showed that photoreaction time increases with the dosage of raw material increases and the decrease of light intensity.In order to remove trichlorosilane,the amount-of-substance ratio of chlorine to trichlorosilane must be greater than 22∶1 at least.There existed a critical value,when amount-of-substance ratio of chlorine to trichlorosilane was not over it,photoreaction time decreased as the amount-of-substance ratio increased,otherwise photoreaction time will only increased.In addition,the bigger the light intensity,the smaller the critical value.

关 键 词：四氯化硅 三氯氢硅 光化反应 

分 类 号：TQ127.2[化学工程—无机化工]