利用新设计磨具对铌酸锂晶片的减薄及减薄后的测试  

Thinning of Lithium Niobate Wafers with a Novel Designed Lapping Tool and Measurements

作　　者：杜文龙[1] 梁庭[1] 薛晨阳[1] 唐建军[1] 叶挺[1] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室电子测试技术国防重点实验室,山西太原030051

出　　处：《材料科学与工程学报》2010年第6期934-937,共4页Journal of Materials Science and Engineering

基　　金：国家863重大资助项目(2006AA040601);电子测试技术国家级重点实验室开放基金资助项目

摘　　要：铌酸锂晶体具有较强的热释电效应,由铌酸锂制作的红外传感器敏感头受到科研人员的广泛关注。将晶片与硅衬底在200°C和压力100N的条件下键合,利用自行设计的磨具将铌酸锂减薄到40微米,磨料由水与刚玉以1∶1的比例制成。本文讨论了铌酸锂键合的过程,减薄的过程及厚度测试,通过拉曼光谱分析残余应力,通过原子力显微镜测试样品表面粗糙度。研究结果表明,通过自行设计的磨具研磨的晶片厚度最大差值7微米,较为均匀;研磨后晶片表面粗糙度为118纳米,较为粗糙;键合后存在一定的残余应力。制作好的铌酸锂晶片符合制作红外传感器敏感头的要求。Because of the pyroelectric effects,infrared sensors made of lithium niobate have attracted much attention for its potential applications.A lithium niobate wafer and a silicon substrate were bonded together at 200℃ under a pressure of 100N.Lithium niobate had been thinned to 40 microns using a novel designed lapping tool.The abrasive contains water and corundum with a ratio of 1∶1.The bonding and thinning process of lithium niobate was studied.The residual stress was analyzed by Raman spectroscopy.Sample surface roughness was tested by atomic force microscopy.Maximum difference of wafer thickness is 7 microns.After grinding,surface roughness of the wafer is 118nm.Lithium niobate chips processed by our procedure can be used as infrared sensors.

关 键 词：铌酸锂 研磨 晶片 拉曼 原子力 

分 类 号：TN405[电子电信—微电子学与固体电子学]