SiGe HBT高频噪声等效模型研究  

Study on High-frequency Noise Equivalent Model for SiGe HBT

作　　者：钮维[1] 王军[1] 

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《通信技术》2010年第12期180-183,共4页Communications Technology

摘　　要：对硅锗异质结双极型晶体管(SiGe HBT)等效高频噪声模型进行了研究,在建模过程中,SiGe HBT的等效电路为小信号准静态等效电路,使用二端口网络噪声相关矩阵技术从实测噪声参数提取基极和发射极的散粒噪声,提取结果与几种散粒噪声模型进行对比分析,重点研究半经验模型建立过程,对半经验模型与常用的噪声模型使用CAD仿真验证,结果表明了半经验模型的有效性、更具准确性,该半经验模型能够用到不同工艺SiGe HBT的高频噪声模拟。The equivalent high-frequency noise model for SiGe HBT was studied,In the modeling process,the equivalent circuit for SiGe HBT is the small-signal quasi-static equivalent circuit,the base and emitter shot noises are extracted from the measured four-noise parameter by using the method of two-port network noise correlation matrix,the extracted results are compared with several shot noise models.The process of establishing semi-empirical model is principally studied,and the semi-empirical model and noise model commonly used are verified by CAD simulation,and the simulation results show that the semi-empirical model is comparatively effective and accurate,and could be applied to predicting the high-frequency noise of SiGe HBTs with different technologies.

关 键 词：SIGEHBT 高频噪声 等效模型 

分 类 号：TN322.8[电子电信—物理电子学]