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作 者:樊吉龙[1] 朱永伟[1] 李军[1] 李茂[1] 叶剑锋[1] 左敦稳[1]
出 处:《硅酸盐通报》2010年第6期1253-1257,共5页Bulletin of the Chinese Ceramic Society
基 金:国家自然科学基金(No.50905086);南京航空航天大学基本科研业务费专项科研项目资助(NS2010127)
摘 要:采用金刚石丸片和固结磨料抛光垫两种方式研磨加工硅片,以硅片的材料去除率(MRR)和表面粗糙度(Sa)为指标对金刚石丸片和固结磨料抛光垫的研磨性能进行了评价。结果表明:固结磨料抛光垫研磨硅片的材料去除率高于金刚石丸片;研磨后硅片的表面粗糙度也优于金刚石丸片,且表面粗糙度(Sa)在中部和边缘相差不大。最后分析了研磨硅片的产物-磨屑的形状特征,得出固结磨料抛光垫研磨硅片时的塑性去除量远高于金刚石丸片。Diamond pellets and fixed-abrasive pad(FAP) were employed to lap silicon wafers.The material removal rate(MRR) and the average surface roughness(Sa) of the lapped silicon wafer were chosen to evaluate their lapping performance.Results show that the material removal rate lapped with FAP is higher than that with diamond pellets,and the average surface roughness with FAP is lower than that with diamond pellets.The surface roughness around the central area and around the edge area has little difference after lapped with FAP.Finally,lapping debris of silicon wafer were observed using scanning electronic microscope(SEM).Their shape features were analyzed.Results show that the ratio of ductile removal is much higher while lapped with FAP.
关 键 词:固结磨料研磨 金刚石丸片 材料去除速率 表面粗糙度
分 类 号:TQ164[化学工程—高温制品工业]
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