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作 者:任凤章[1,2] 陈洁[1] 赵士阳[2] 马战红[1] 王宇飞[1] 田保红[1]
机构地区:[1]河南科技大学材料科学与工程学院,河南洛阳471003 [2]河南省有色金属材料科学与加工技术重点实验室,河南洛阳471003
出 处:《材料热处理学报》2010年第12期143-147,共5页Transactions of Materials and Heat Treatment
基 金:国家自然科学基金资助项目(50771042);河南省基础与前沿技术研究计划资助项目(092300410064);河南省科技创新人才计划项目(104100510005);河南省高校科技创新人才支持计划资助项目(2009HASTIT023)
摘 要:用电沉积法分别制备了具有不同调制波长的Ag/Cu和Cu/Ni金属多层膜,研究了多层膜的硬度与调制波长之间的关系。结果表明,当调制波长λ>300 nm时,两种多层膜的硬度与调制波长符合位错塞积机制的Hall-Petch关系,当λ<300 nm时,都偏离了Hall-Petch关系;Ag/Cu和Cu/Ni多层膜分别在λ=50 nm和100 nm处取得硬度峰值。基于Cheng等人的电子理论分别求出了Ag、Cu和Ni金属晶体的位错稳定的临界晶粒尺寸,进而定量地解释了Ag/Cu和Cu/Ni金属多层膜硬度峰值位置。Ag/Cu and Cu/Ni metallic multilayer films with various modulation wavelengths were prepared by electrodepositing technique.The relationship between hardness of the multilayer and the modulation wavelength was investigated.For both Ag/Cu and Cu/Ni multilayers,when the modulation wavelength is greater than 300 nm,the variation of hardness with respect to modulation wavelength can be described by the Hall-Petch model of the dislocation pile-ups mechanism,and a breakdown from the Hall-Petch model is observed at modulation wavelength below 300 nm.The peak hardness occurs at modulation wavelength about 50 nm for Ag/Cu and about 100 nm for Cu/Ni multilayers.Based on Cheng’s electron theory,the critical grain sizes with stable dislocations for Ag,Cu and Ni crystals were evaluated.The positions of the peak hardness can be explained according to the critical grain size with stable dislocations.
关 键 词:多层膜 HALL-PETCH关系 临界晶粒尺寸 电子理论
分 类 号:TG111.1[金属学及工艺—物理冶金]
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