一种新的基于E-SIMOX衬底的PSOI高压器件  

A Novel PSOI High Voltage Device Based on E-SIMOX Substrate

作　　者：吴丽娟[1,2] 胡盛东[1] 张波[1] 李肇基[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [2]成都信息工程学院通信工程系,成都610225

出　　处：《固体电子学研究与进展》2010年第4期473-477,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(60436030;60806025)

摘　　要：首次提出了一种新的采用E-SIMOX技术的界面电荷岛结构的PSOI高压器件(NI PSOI)。该结构在SOI器件介质层上界面注入形成一系列等距的高浓度N+区。器件外加高压时,纵向电场所形成的反型电荷将被未耗尽N+区内高浓度的电离施主束缚在介质层上界面,同时在下界面积累感应电子。详细研究NI PSOI工作机理及相关结构参数对BV的影响,在0.375μm介质层、2μm顶层硅上仿真获得188 V高耐压,较常规结构提高54.1%,其中附加场EI和ES分别达到190 V/μm和13.7 V/μm。A novel NI（N＋ charge islands） high voltage device structure based on E-SIMOX（Epitaxy-the Separation by IMplantation of Oxygen） substrate is proposed in this paper.NI PSOI is characterized by a series of equidistant high concentration N＋-regions on the top and interfaces of dielectric buried layer.Interface inversion holes resulting from vertical electric field are located in the spacing of two neighboring N＋-regions,and at the same time,induced electrons are formed on the bottom interface.The enhanced field ΔEI and reduced field ΔES by the accumulated interface charges reach to 190 V/μm and 13.7 V/μm,respectively,with which 188 V BV of NI PSOI is obtained by 2D simulation on a 0.375 μm-thick dielectric layer and 2 μm-thick top silicon layer,increasing by 54.1%,in comparison with conventional SOI.

关 键 词：外延-注氧隔离 电荷岛 击穿电压 界面电荷 介质场增强 

分 类 号：TN386[电子电信—物理电子学]