生长在p-GaAs衬底上的ZnO基异质结二极管电致发光(英文)  

Ultraviolet Electroluminescence from ZnO-based Heterojunction Light-emitting Diodes Fabricated on p-GaAs Substrate

作　　者：李炳辉[1] 姚斌[1,2] 李永峰[1] 邓蕊[2] 张振中[1] 刘卫卫[1] 单崇新[1] 张吉英[1] 申德振[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春130033 [2]吉林大学物理学院,吉林长春130021

出　　处：《发光学报》2010年第6期854-858,共5页Chinese Journal of Luminescence

基　　金：Project supported by the Key Project of National Natural Science Foundation of China(50532050);the"973"program (2006CB604906);the Knowledge Innovation Project of Chinese Academy of Sciences;the National Natural Science Foundation of China(60806002,60506014,10874178,10674133,60776011)~~

摘　　要：利用等离子体辅助分子束外延在p型砷化镓衬底上制备了ZnO异质结发光二极管。实验表明:GaAs与ZnO之间的氧化镁绝缘层能够有效改善器件光电性能,I-V特性的研究表明该器件具有良好的整流特性,开启电压为3 V,电致发光光谱由一个紫外发光峰和一个可见发光带构成,其来源分别为ZnO层中近带边缺陷以及深能级缺陷相关的辐射复合。ZnO-based heterojunction light-emitting diodes have been fabricated on p-type GaAs substrate by plasma-assisted molecular beam expitaxy.An electron-blocking MgO layer between thin ZnO film and p-GaAs substrate plays a key role in improving performance of the diodes.Comparing with the n-ZnO/p-GaAs heterojunction,the ZnO/MgO/p-GaAs heterojunction shows a typical diode characteristic with a forward threshold voltage of 3 V.Electroluminescence measurement indicates that the ZnO/MgO/p-GaAs heterojunction has a visible emission band attributed to the defect-related recombination in the ZnO layer and an ultraviolet emission peak.

关 键 词：氧化锌 分子束外延 电致发光 发光二极管 

分 类 号：O482.31[理学—固体物理]