纳米Si_3N_4/氰酸酯树脂电子封装材料的研究  

Study on nano-Si_3N_4/cyanate ester resin electronic encapsulating material

作　　者：李倩[1,2] 颜红侠[1] 王倩倩[1] 唐玉生[1] 

机构地区：[1]西北工业大学理学院,陕西西安710129 [2]商洛学院化学与化学工程系,陕西商洛726000

出　　处：《中国胶粘剂》2010年第12期14-17,共4页China Adhesives

基　　金：西安市科技计划项目(YF07005);西北工业大学基础研究基金项目(JC201047)

摘　　要：采用硅烷偶联剂(KH-560)对nano-Si3N4进行表面处理,然后以此作为4,4′-二氰酸酯基二苯基甲烷(BCE)的改性剂,制备了nano-Si3N4/BCE电子封装材料,并研究了该体系的静态力学性能、动态力学性能以及介电性能。结果表明:nano-Si3N4的加入提高了材料的冲击强度和弯曲强度,当w(nano-Si3N4)=3%时,冲击强度、弯曲强度分别由纯BCE的10.1 kJ/m2和94.11 MPa提高到14.58 kJ/m2和112.13 MPa;Nano-Si3N4/BCE体系的储能模量在低温区略低于纯BCE体系,在高温区则略高于纯BCE体系;改性体系的介电常数高于纯BCE体系,但介电损耗因子则低于纯BCE体系。A nano-Si3N4/BCE electronic encapsulating material was prepared with nano-Si3N4 surface treated by silane coupler（KH-560） as modifier of BCE,and the some properties（such as static mechanical property,dynamic mechanical property and dielectric property） of the system were investigated.The results showed that the adding nano-Si3N4 can obviously improve the impact strength and flexural strength of nano-Si3N4/BCE composites because the impact strength and flexural strength were increased from 10.1 kJ/m2 and 94.11 MPa of pure BCE to 14.58 kJ/m2 and 112.13 MPa of nano-Si3N4/BCE composites when mass fraction of nano-Si3N4 was 3%.The storage modulus of nano-Si3N4/BCE system was slightly less than that of pure BCE system at low temperature range and was slightly more than that of pure BCE system at high temperature range.The dielectric constant of nano-Si3N4/BCE system was higher than that of pure BCE system,but the dielectric loss factor of nano-Si3N4/BCE system was less than that of pure BCE system.

关 键 词：氰酸酯树脂 纳米SI3N4 增韧 介电性能 封装材料 

分 类 号：TQ324.9[化学工程—合成树脂塑料工业]