Ge诱导晶化多晶Si薄膜的制备及结构表征  

Preparation and structure characterization of poly-Si thin films with Ge-induced crystallization

作　　者：邓书康[1] 康昆勇[1] 郝瑞亭[1] 申兰先[1] 田晶[1] 涂洁磊[1] 廖华[1] 杨培志[1] 

机构地区：[1]云南师范大学教育部可再生能源材料先进技术与制备重点实验室,云南昆明650092

出　　处：《光电子．激光》2011年第1期75-78,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学青年基金资助项目(50902119);云南省社会发展基础研究资助项目(2009CD114;2007E197M)

摘　　要：采用测控溅射,通过Ge诱导晶化法在Si衬底上制备多晶Si薄膜。采用Raman光谱、X射线衍射(XRD)、原子力显微镜(AFM)及场发射扫描电镜(FESEM)等对所制备的薄膜进行表征。结果表明,当生长温度为800℃时,Ge有诱导非晶Si(a-Si)薄膜晶化的作用,所制备的多晶Si薄膜在(200)方向具有择优取向,且在此方向对应的晶粒尺寸约为53.7 nm。表面粗糙度为2.39 nm,表面平均晶粒尺寸约为69 nm。The preparation of poly-Si thin films by Ge-induced crystallization was investigated.The obtained films were characterized by Raman spectroscopy,X-ray diffraction（XRD）,atomic force microscope（AFM） and field emission scanning electron microscope（FE-SEM）.The results reveal that Ge can induce amorphous Si（a-Si） crystallization at the growth temperature of 800 ℃.The prepared poly-Si films possess（200） orientation with grain size of 53.7 nm.The surface roughness and average surface grain size are 2.39 nm and 69 nm,respectively.The preparation of poly-Si films with induced crystallization by Ge might be a useful technology to develop high quality poly-Si films.

关 键 词：多晶硅薄膜 诱导晶化 制备 结构表征 

分 类 号：TN304.055[电子电信—物理电子学]