Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition  

作　　者：方浩 龙浩 桑立雯 齐胜利 熊畅 于彤军 杨志坚 张国义 

机构地区：[1]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University

出　　处：《Chinese Physics B》2011年第1期639-642,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.60676032,60776041,60976009 and U0834001);the National Basic Research program of China(Grant No.2007CB307004)

摘　　要：We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/（V· s） and 460 Ω/respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electrolurninescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/（V· s） and 460 Ω/respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electrolurninescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.

关 键 词：metal-organic chemical deposition III-NITRIDES NONPOLAR light emitting diodes 

分 类 号：TN312.8[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业]