III-NITRIDES

作品数：5被引量：2H指数：1
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Deep-ultraviolet photonics for the disinfection of SARS-CoV-2 and its variants(Delta and Omicron)in the cryogenic environment被引量：1
《Opto-Electronic Advances》2023年第9期16-29,共14页Wenyu Kang Jing Zheng Jiaxin Huang Lina Jiang Qingna Wang Zhinan Guo Jun Yin Xianming Deng Ye Wang Junyong Kang 
supported by the National Key R&D Program of China(2022YFB3605002);the Key Scientific and Technological Program of Xiamen(3502Z20211002).
Deep-ultraviolet(DUV)disinfection technology provides an expeditious and efficient way to suppress the transmission of coronavirus disease 2019(COVID-19).However,the influences of viral variants(Delta and Omicron)and ...
关键词：LED UV-C III-nitrides semiconductors photoelectronic COVID-19 virucidal efficacy 
Coherent-interface-induced strain in large lattice-mismatched materials:A new approach for modeling Raman shift被引量：1
《Nano Research》2022年第3期2405-2412,共8页Andrian V.Kuchuk Fernando Mde Oliveira Pijush K.Ghosh Yuriy I.Mazur Hryhorii V.Stanchu Marcio D.Teodoro Morgan E.Ware Gregory J.Salamo 
the U.S.National Science Foundation Engineering Research Center for Power Optimization of Electro Thermal Systems(POETS)with cooperative agreement EEC-1449548;F.M.O.and M.D.T.acknowledge the financial support of Coordenação de Aperfeiçoamento de Pessoal de Nível Superior-Brasil(CAPES)-Finance Code 001.
Strain engineering as one of the most powerful techniques for tuning optical and electronic properties of III-nitrides requires reliable methods for strain investigation.In this work,we reveal,that the linear model ba...
关键词：Raman spectroscopy strain lattice coherency III-NITRIDES high-resolution X-ray diffraction(HRXRD) 
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
《Journal of Semiconductors》2011年第11期69-71,共3页李志聪 李盼盼 王兵 李鸿渐 梁萌 姚然 李璟 邓元明 伊晓燕 王国宏 李晋闽 
supported by the National High Technology Research and Development Program of China(No.2008AA03A197)
Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes （LEDs）, the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with diffe...
关键词：AlGaN/GaN stacks light-emitting diodes dislocation density ESD 
Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition
《Chinese Physics B》2011年第1期639-642,共4页方浩 龙浩 桑立雯 齐胜利 熊畅 于彤军 杨志坚 张国义 
Project supported by the National Natural Science Foundation of China(Grant Nos.60676032,60776041,60976009 and U0834001);the National Basic Research program of China(Grant No.2007CB307004)
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the c...
关键词：metal-organic chemical deposition III-NITRIDES NONPOLAR light emitting diodes 
Influence of crystal polarity and metal electronegativity on the sensing properties of III-nitrides
《材料科学与工程（中英文版）》2009年第6期28-39,共12页Nikoletta Sofikiti George Tsiakatouras Eleuterios Iliopoulos Alexandros Georgakilas Nikos Chaniotakis 
关键词：极性晶体 传感特性 III 氮化物 Lewis酸性 金属 电位响应 GaN 
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