Absorption of photons in the thin film AlGalnP light emitting diode  

作　　者：高伟 郭伟玲 邹德恕 蒋文静 刘自可 沈光地 

机构地区：[1]Key Laboratory of Opto-Electronics Technology of the Ministry of Education Beijing University of Technology

出　　处：《Journal of Semiconductors》2011年第1期72-74,共3页半导体学报（英文版）

基　　金：Project supported by the Natural Science Foundation of Beijing(No.4092007);the National High Technology Research and Development Program of China(Nos.2008AA03Z402,2009AA03A1A3)

摘　　要：The path of photons in the thin film （TF） light emitting diode （LED） was analyzed. The reflectivity of reflector in AlGaInP TF LED with and without the AlGaInP layer was contrasted. The absorption of the AlGaInP layer was analyzed and then the light extraction was calculated and shown in figure. The TF AlGaInP LED with 8μm and 0.6μm GaP was fabricated. At the driving current of 20 mA, the light output power of the latter is 33% higher. For the 0.6μm GaP LED, the etching of heavily doped GaP except the ohmic contact dot area is advised. The design and optimizing of current spreading between the n-type electrode and the p-type ohmic contact dot need further research.The path of photons in the thin film （TF） light emitting diode （LED） was analyzed. The reflectivity of reflector in AlGaInP TF LED with and without the AlGaInP layer was contrasted. The absorption of the AlGaInP layer was analyzed and then the light extraction was calculated and shown in figure. The TF AlGaInP LED with 8μm and 0.6μm GaP was fabricated. At the driving current of 20 mA, the light output power of the latter is 33% higher. For the 0.6μm GaP LED, the etching of heavily doped GaP except the ohmic contact dot area is advised. The design and optimizing of current spreading between the n-type electrode and the p-type ohmic contact dot need further research.

关 键 词：LED ALGAINP thin film 

分 类 号：TN312.8[电子电信—物理电子学] TK519[动力工程及工程热物理—热能工程]