ZnS衬底表面亚波长增透结构的设计及制备  

Design and preparation of sub-wavelength antireflective structures on ZnS

作　　者：徐启远[1] 刘正堂[1] 李阳平[1] 武倩[1] 张淼[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《物理学报》2011年第1期219-222,共4页Acta Physica Sinica

基　　金：航空科学基金(编号:2008ZE53043)资助的课题~~

摘　　要：ZnS是长波红外窗口优选材料之一,而其表面反射率较高;为了减小表面反射,利用耦合波理论,对ZnS衬底表面的亚波长结构参数进行优化设计,得到了具有良好增透效果的最佳亚波长结构参数;并利用掩膜光刻、反应离子刻蚀技术在ZnS衬底表面制备出在8—12μm波段范围内有明显增透效果的二维亚波长结构,这为ZnS衬底的增透提供了一种新的方法.ZnS is one of the excellent materials that are used as long wave window in infrared,but the reflection of the surface is high. In order to reduce the reflection of the ZnS surface,we designed the sub-wavelength antireflective structure on ZnS by coupled-wave theory. The parameters of the sub-wavelength antireflective structure were optimiged and the two-dimensional sub-wavelength antireflective structure on ZnS was fabricated by reactive ion etching technique. The results show that the transmittance of etched ZnS is significantly better than that of bare ZnS at wavelengths of 8—12 μm. This is a new antireflection method using ZnS.

关 键 词：耦合波理论 表面亚波长增透结构 反应离子刻蚀 硫化锌 

分 类 号：O484[理学—固体物理]