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作 者:李园[1] 窦秀明[1] 常秀英[1] 倪海桥[1] 牛智川[1] 孙宝权[1]
机构地区:[1]中国科学院半导体研究所超晶格与微结构国家重点实验室,北京100083
出 处:《物理学报》2011年第1期695-699,共5页Acta Physica Sinica
基 金:国家自然科学基金(批准号:90921015)资助的课题~~
摘 要:利用分子束外延生长InAs单量子点样品,温度为5K时,测量了单量子点中单、双激子自发辐射的荧光(PL)光谱.研究了单、双激子发光强度随激发功率的变化及对应发光峰的偏振特性和精细结构劈裂.基于Hanbury-Brown Twiss(HBT)实验,测量了单、双激子间发光光谱的关联函数,证实了其发光过程为级联发射过程.Single InAs quantum dot ( QD) sample was grown by molecular-beam epitaxy ( MBE). The Photoluminescences (PL) of the exciton and biexciton in a single QD were measured at 5 K. The PL intensity as a function of the laser excitation power,the fine structure splittings of the exciton and biexciton,and the corresponding linearly polarized emissions were analyzed. By means of Hanbury-Brown and Twiss (HBT) setup,the photon correlation between the PL of exciton and biexciton were measured,which is gave an evidence of the quantum cascade emissions between biexciton and exciton PL.
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