射频激发热丝化学气相沉积制备硅薄膜过程中光发射谱的研究  

rf excited optical emission spectrum of radicals generated during hot wire chemical vapour deposition for the preparation of microcrystalline silicon thin film

作　　者：李天微[1] 刘丰珍[1] 朱美芳[1] 

机构地区：[1]中国科学院研究生院材料学院,北京100049

出　　处：《物理学报》2011年第1期744-750,共7页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2006CB202601);中国科学院知识创新工程重要方向项目资助的课题~~

摘　　要：采用射频(rf)激发,在热丝化学气相沉积(HWCVD)制备微晶硅薄膜的过程中产生发光基元,测量了rf激发HWCVD(rf-HWCVD)的光发射谱,比较了相同工艺条件下rf-HWCVD和等离子体增强CVD(PECVD)的光发射谱,分析了rf功率、热丝温度和沉积气压对rf-HWCVD光发射谱的影响.结果表明,在射频功率<0.1W/cm2时,rf-HWCVD发射光谱反映了HWCVD高的气体分解效率和高浓度原子氢的特点,能够解释气压变化与微晶硅薄膜微结构的关系,是研究HWCVD气相过程的有效方法之一.To study the radicals behavior in the hot wire chemical vapour deposition （HWCVD） process for the preparation of microcrystalline Si （ μc-Si： H） thin film,a weak radio frequency （ rf） power was introduced to excite the radicals generated in HWCVD chamber. The spectrum of rf-excited HWCVD （ rf-HWCVD） was obtained by subtracting the emission of hot wires from the spectrum measured by OES. The influence of the rf power on the rf-HWCVD spectrum can be neglected as the rf power density was less than 0. 1 W/cm2. Under the same deposition parameters,the emission spectra for rf-HWCVD and plasma enhanced CVD （PECVD） processes are different. Under the low deposition pressure （7. 5 Pa）,the intensities of SiH and Hα vary with the hot wire temperature reversely,which is characteristic of HWCVD with high gas dissociation rate and high concentration of atomic H. The ratio of intensity of Hα to SiH in the emission spectrum of rf-HWCVD varying with deposition pressure is consistent with the crystalline fraction of μc-Si： H film. The results indicate that the optical emission spectroscopy measurement is a suitable method for the investigation of the HWCVD process excited by a weak rf-power.

关 键 词：HWCVD OES 微晶硅 

分 类 号：O484.41[理学—固体物理]