不同掺杂类型的GaN间隔层和量子阱垒层对双波长LED作用的研究  

Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED

作　　者：张运炎[1] 范广涵[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广州510631

出　　处：《物理学报》2011年第1期778-783,共6页Acta Physica Sinica

基　　金：2009年省部产学研结合引导项目(批准号:2009B090300338);粤港关键领域重点突破项目(批准号:2007A010501008);教育部博士点基金项目(批准号:350163)资助的课题~~

摘　　要：采用软件理论分析的方法对不同掺杂类型的GaN间隔层和量子阱垒层在InGaN/GaN多量子阱双波长发光二极管中对发光光强、内量子效率、电子空穴浓度分布、溢出电流等作用进行模拟分析.分析结果表明,p型掺杂的GaN间隔层与量子阱垒层的引入同不掺杂和n型掺杂两种类型比较,可以大大减少溢出电子流,极大地提高各量子阱内空穴浓度,提高双波长发光二极管的发光强度,极大的改善内量子效率随电流增大而下降问题.A 2D simulation of electrical and optical characteristics of dual-wavelength LED with GaN interval layers and quantum well barrier layers of different doping types was conducted with APSYS software. It showed that with the use of p-type doped GaN interval layer and quantum well barrier layers,we can greatly improve the hole concentration in QWs and reduce the electron overflow of the chip. We can also increase the luminous intensity and dramatically improve the dropping of internal quantum efficiency of the LED when the current increases.

关 键 词：GAN 掺杂类型 数值模拟 双波长发光二极管 

分 类 号：TN312.8[电子电信—物理电子学]