稀土元素掺杂的Hf基栅介质材料研究进展  

Progress in rare earth doped Hf-based high-k gate dielectrics

作　　者：郑晓虎[1] 黄安平[1] 杨智超[1] 肖志松[1] 王玫[1] 程国安[2] 

机构地区：[1]北京航空航天大学物理系,北京100191 [2]北京师范大学射线束技术与材料改性教育部重点实验室,北京100875

出　　处：《物理学报》2011年第1期811-822,共12页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50802005;11074020);教育部新世纪优秀人才基金(NCET-08-0035);教育部博士点基金(批准号:200800061055)资助的课题~~

摘　　要：随着金属氧化物半导体场效应管(MOSFETs)等比缩小到45nm技术节点,具有高介电常数的栅介质材料(高k材料)取代传统的SiO2已经成为必然,然而Hf基高k材料在实际应用中仍然存在许多不足,而稀土元素掺杂在提高Hf基栅介质材料的k值、降低缺陷密度、调整MOSFETs器件的阈值电压等方面表现出明显的优势.本文综述了Hf基高k材料的发展历程,面临的挑战,稀土掺杂对Hf基高k材料性能的调节以及未来研究的趋势.As the scaling of MOSFETs continues towards 45 nm technology node,it is inevitable that Hf-based high-k materials replace the traditional SiO2 as the gate dielectrics of MOSFETs. But there are still many issues to be settled. Rare earth doping can increase the k value of dielectrics,decrease the defect densities of dielectrics and modulate the threshold voltage shift of MOSFETs. This paper reviews recent progress,the challenge of Hf-based high-k materials,the influence of rare earth doping on Hf-based high-k materials and its future trend.

关 键 词：Hf基高k栅介质 稀土掺杂 氧空位缺陷 有效功函数 

分 类 号：O482[理学—固体物理]