变温辐照加速评估方法在不同工艺的NPN双极晶体管上的应用  

Application of Accelerated Simulation Method on NPN Bipolar Transistors of Different Technology

作　　者：费武雄[1,2,3] 陆妩[1,2] 任迪远[1,2] 郑玉展[1,2,3] 王义元[1,2,3] 陈睿[1,2,3] 李茂顺[1,2,3] 兰博[1,2,3] 崔江维[1,2,3] 赵云[1,2,3] 王志宽[4] 杨永晖[4] 

机构地区：[1]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,新疆乌鲁木齐830011 [3]中国科学院研究生院,北京100049 [4]模拟集成电路国家重点实验室,重庆400060

出　　处：《原子能科学技术》2010年第12期1493-1497,共5页Atomic Energy Science and Technology

摘　　要：对6种不同工艺的NPN双极晶体管进行了高、低剂量率及变温辐照的^(60)Coγ辐照实验。结果显示,6种工艺的NPN双极晶体管均有显著的低剂量率辐照损伤增强效应。而变温辐照损伤不仅明显高于室温高剂量率的辐照损伤,且能很好地模拟并保守地评估不同工艺的NPN双极晶体管低剂量率的辐照损伤。对实验现象的机理进行了分析。With different radiation methods,ionizing radiation response of NPN bipolar transistors of six different processes was investigated.The results show that the enhanced low dose rate sensitivity obviously exists in NPN bipolar transistors of the six kinds of processes.According to the experiment,the damage of decreasing temperature in step during irradiation is obviously greater than the result of irradiated at high dose rate.This irradiation method can perfectly simulate and conservatively evaluate low dose rate damage,which is of great significance to radiation effects research of bipolar devices.Finally,the mechanisms of the experimental phenomena were analyzed.

关 键 词：NPN双极晶体管 ~60Coγ辐照 低剂量率辐照损伤增强 变温辐照 加速评估方法 

分 类 号：TN322.8[电子电信—物理电子学]