基于AlN膜结构VCSEL热特性的研究(英文)  

Thermal Characteristic of VCSEL with AlN Film Passivation Layer

作　　者：马祥柱[1] 张斯钰[1] 赵博[1] 李辉[1] 霍晋[1,2] 曲轶[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022 [2]海特光电有限责任公司,北京100083

出　　处：《光子学报》2010年第12期2113-2117,共5页Acta Photonica Sinica

基　　金：Supported by the National Natural Science Foundation of China(60976044)

摘　　要：本文用ANSYS有限元热分析软件模拟了基于AlN膜钝化层和Si O2膜钝化层的高功率垂直腔面发射半导体激光器(VCSEL)器件内部的热场分布和热矢量分布.目的是证明Al N膜钝化层要比SiO2膜钝化层有具更好的特性,使器件能更稳定的工作,提高器件的特性,经模拟得到基于Al N膜钝化层的VCSEL热阻为3.12℃/W,而基于SiO2膜钝化层的VCSEL的热阻为4.77℃/W.经实验测得基于Al N膜钝化层的VCSEL热阻为3.59℃/W而基于SiO2膜钝化层的VCSEL的热阻为4.82℃/W,模拟结果和实验结果吻合较好.说明AlN膜钝化层要比SiO2膜钝化层具有更好的热特性.In this paper,the internal thermal field and heat flow vector distributions of high power vertical-cavity surface-emitting semiconductor lasers（VCSELs）,which is based on AlN film and SiO2 film passivation layers,were analyzed using ANSYS finite-element software.The simulation results proved that the AlN film passivation layer has better features than the SiO2 film passivation layers,and can make the device work in a more stable status,which also improves the device characteristics.Through the simulation,it was found that the Rthjc of VCSEL in AlN film was 3.12 K/W and the Rthjc of VCSEL in SiO2 film was 4.77 K/W.Comparison with the experimental values that the AlN film of 3.59 K/W and the SiO2 film of 4.82 K/W shows that simulation results are in good agreement with the experimental results.The proposed research works prove that the AlN film passivation layer has better thermal features than SiO2 film passivation layer.

关 键 词：垂直腔面发射激光器 AlN膜 SIO2膜 ANSYS 

分 类 号：TN248.4[电子电信—物理电子学]