大容量存储中NAND Flash坏块的管理方法  

Management method of NAND Flash ineffectiveness block in high capacity storage

作　　者：宁飞[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,山西太原030051

出　　处：《电子测试》2010年第12期64-68,共5页Electronic Test

基　　金：国家自然科学基金(60877011)资助

摘　　要：在当今数字时代,NAND Flash由于其非易失性和读写速度快等原因而在大容量存储中的应用越来越广。但由于Flash中不可避免的会出现坏块,对大容量存储的速度与精度都造成了影响,针对大容量存储中NAND Flash存在坏块对其造成的影响,我们主要研究了NAND Flash中坏块出现的原因,对坏块进行的分类,并提出了相应的管理方案。实践证明,经过对坏块的管理,Flash存储数据的安全性和存储速度都有了很大的提升,提高了系统的整体性能。NAND Flash has a wide application in high capacity storage in the recent digital era for its non-volatility and fast read-write speed.However,the inevitable bad blocks of flash affect the speed and accurity of the mass storage.According to the effect caused by the existence of bad block in high capacity storage,this paper mainly researches on the reason of existence of bad block in NAND Flash,classifies the bad block and proposes the relevant management method.Test showed that though the management of bad blocks,storage of data security and speed get greatly improved.

关 键 词：NAND FLASH 无效块 无效块管理 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]