利用Kelvin探针力显微镜研究纳米尺度下n-AlGaN/GaN薄膜的表面电荷性质  

Surface Charge Characteristics of n-AlGaN/GaN Heterostructures Films in Nano-scale by Kelvin Probe Force Microscopy in Vacuum

作　　者：王凌凌[1] 杨文胜[1] 王德军[1] 谢腾峰[1] 

机构地区：[1]吉林大学化学学院,长春130012

出　　处：《高等学校化学学报》2011年第1期139-142,共4页Chemical Journal of Chinese Universities

基　　金：国家重点基础研究发展计划项目(批准号:2007CB613303);国家自然科学基金(批准号:20703020;20873053)资助

摘　　要：利用真空Kelvin探针力显微镜(KFM)研究了纳米尺度下n-AlGaN/GaN薄膜的表面电荷性质并进行了定量测量.结果表明,n-AlGaN/GaN薄膜的表面位错均为电活性的受主型表面态,所捕获电荷的区域远远大于表面位错的大小,其表面电势与GaN薄膜表面电势的最大差值达到590 mV.在光照下,n-AlGaN/GaN薄膜的表面电荷发生了明显的光生电荷重新分布现象.The surface charge characteristics of n-AlGaN/GaN heterostructures films in nano-scale were studied by means of Kelvin probe force microscopy（KFM） technique in vacuum.The results show that all the dislocations of n-AlGaN/GaN heterostructures films are negatively charged,and the maxinum contact potential difference between the dislocations and GaN is about 590 mV.Moreover the contact potential variations around the dislocations in n-AlGaN/GaN heterostructures films is much larger than that of dislocations in diameter.The photo-generated charges rediscontribution was observed under illumination.This result indicates that surface charges of semiconductor in nano-scale can be measured quantitatively by KFM in vacuum condition.

关 键 词：ALGAN/GAN异质结 表面电势 Kelvin探针力显微镜 光生电荷转移 

分 类 号：O649.2[理学—物理化学] O614[理学—化学]